IXFB170N30P MOSFET Transistor

The IXFB170N30P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFB170N30P transistor as follows.

IXFB170N30P Transistor Specification

Transistor Code		IXFB170N30P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS264
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	170A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	1250W
Operating Junction Temperature (Maximum)		150°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		258nC

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