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IXFB110N60P3 MOSFET Transistor

The IXFB110N60P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFB110N60P3 transistor as follows.

Circuit diagram symbol of the IXFB110N60P3 transistor

IXFB110N60P3 Transistor Specification

Transistor Code IXFB110N60P3
Transistor Type MOSFET
Control Channel Type N-Channel
Package PLUS264
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 110A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.056Ohm
Power Dissipation (Maximum) PD 1890W
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 245nC

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