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IXFB100N50Q3 MOSFET Transistor

The IXFB100N50Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFB100N50Q3 transistor as follows.

Circuit diagram symbol of the IXFB100N50Q3 transistor

IXFB100N50Q3 Transistor Specification

Transistor Code IXFB100N50Q3
Transistor Type MOSFET
Control Channel Type N-Channel
Package PLUS264
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.049Ohm
Power Dissipation (Maximum) PD 1560W
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 6.5V
Total Gate Charge 255nC

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