IXFB100N50Q3 MOSFET Transistor

The IXFB100N50Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFB100N50Q3 transistor as follows.

IXFB100N50Q3 Transistor Specification

Transistor Code		IXFB100N50Q3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS264
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.049Ohm
Power Dissipation (Maximum)	PD	1560W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		6.5V
Total Gate Charge		255nC

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