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IXFB100N50P MOSFET Transistor

The IXFB100N50P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFB100N50P transistor as follows.

Circuit diagram symbol of the IXFB100N50P transistor

IXFB100N50P Transistor Specification

Transistor Code IXFB100N50P
Transistor Type MOSFET
Control Channel Type N-Channel
Package PLUS264
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.049Ohm
Power Dissipation (Maximum) PD 1250W
Rise Time 200nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 240nC

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