IXFB100N50P MOSFET Transistor

The IXFB100N50P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFB100N50P transistor as follows.

IXFB100N50P Transistor Specification

Transistor Code		IXFB100N50P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS264
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.049Ohm
Power Dissipation (Maximum)	PD	1250W
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		240nC

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