IXFA7N60P3 MOSFET Transistor

The IXFA7N60P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFA7N60P3 transistor as follows.

IXFA7N60P3 Transistor Specification

Transistor Code		IXFA7N60P3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AA
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.15Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		84pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		5V

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