ISL9N303AP3 MOSFET Transistor

The ISL9N303AP3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ISL9N303AP3 transistor as follows.

ISL9N303AP3 Transistor Specification

Transistor Code		ISL9N303AP3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0032Ohm
Power Dissipation (Maximum)	PD	215W
Drain-Source Capacitance		1350pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		172nC

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