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IRLZ14S MOSFET Transistor

The IRLZ14S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLZ14S transistor as follows.

Circuit diagram symbol of the IRLZ14S transistor

IRLZ14S Transistor Specification

Transistor Code IRLZ14S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 43W
Drain-Source Capacitance 170pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 110nS
Gate-Threshold Voltage (Maximum) 2V

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