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IRLW620A MOSFET Transistor

The IRLW620A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLW620A transistor as follows.

Circuit diagram symbol of the IRLW620A transistor

IRLW620A Transistor Specification

Transistor Code IRLW620A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 200V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.8Ohm
Power Dissipation (Maximum) PD 39W
Drain-Source Capacitance 330pF
Operating Junction Temperature (Maximum) 150°C

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