IRLW530A MOSFET Transistor

The IRLW530A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLW530A transistor as follows.

IRLW530A Transistor Specification

Transistor Code		IRLW530A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	62W
Drain-Source Capacitance		580pF
Operating Junction Temperature (Maximum)		150°C

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