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IRLTS6342PBF MOSFET Transistor

The IRLTS6342PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLTS6342PBF transistor as follows.

Circuit diagram symbol of the IRLTS6342PBF transistor

IRLTS6342PBF Transistor Specification

Transistor Code IRLTS6342PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT457
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 8.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0175Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 96pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 1.1V

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