IRLS610A MOSFET Transistor

The IRLS610A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLS610A transistor as follows.

IRLS610A Transistor Specification

Transistor Code		IRLS610A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	19W
Drain-Source Capacitance		185pF
Operating Junction Temperature (Maximum)		150°C

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