IRLS4030PBF MOSFET Transistor

The IRLS4030PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLS4030PBF transistor as follows.

IRLS4030PBF Transistor Specification

Transistor Code		IRLS4030PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0043Ohm
Power Dissipation (Maximum)	PD	370W
Drain-Source Capacitance		670pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		330nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		130nC

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