IRLS3813PBF MOSFET Transistor

The IRLS3813PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLS3813PBF transistor as follows.

IRLS3813PBF Transistor Specification

Transistor Code		IRLS3813PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	160A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00195Ohm
Power Dissipation (Maximum)	PD	195W
Drain-Source Capacitance		1250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		202nS
Gate-Threshold Voltage (Maximum)		2.35V

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