IRLR8256PBF MOSFET Transistor

The IRLR8256PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR8256PBF transistor as follows.

IRLR8256PBF Transistor Specification

Transistor Code		IRLR8256PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	81A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0057Ohm
Power Dissipation (Maximum)	PD	63W
Drain-Source Capacitance		453pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		2.35V

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