IRLR8256 MOSFET Transistor

The IRLR8256 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR8256 transistor as follows.

IRLR8256 Transistor Specification

Transistor Code		IRLR8256
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	81A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0057Ohm
Power Dissipation (Maximum)	PD	63W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.35V

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