IRLR8113PBF MOSFET Transistor

The IRLR8113PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR8113PBF transistor as follows.

IRLR8113PBF Transistor Specification

Transistor Code		IRLR8113PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	94A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	89W
Drain-Source Capacitance		610pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		3.8nS
Gate-Threshold Voltage (Maximum)		2.25V

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