IRLR8113 MOSFET Transistor

The IRLR8113 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR8113 transistor as follows.

IRLR8113 Transistor Specification

Transistor Code		IRLR8113
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	94A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	89W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.25V
Total Gate Charge		22nC

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