IRLR8103VPBF MOSFET Transistor

The IRLR8103VPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR8103VPBF transistor as follows.

IRLR8103VPBF Transistor Specification

Transistor Code		IRLR8103VPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	91A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	115W
Drain-Source Capacitance		1064pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		3V

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