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IRLR8103 MOSFET Transistor

The IRLR8103 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR8103 transistor as follows.

Circuit diagram symbol of the IRLR8103 transistor

IRLR8103 Transistor Specification

Transistor Code IRLR8103
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 89A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 89W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 2V

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