IRLR7843PBF MOSFET Transistor

The IRLR7843PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR7843PBF transistor as follows.

IRLR7843PBF Transistor Specification

Transistor Code		IRLR7843PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	161A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0033Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		940pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		42nS
Gate-Threshold Voltage (Maximum)		2.3V

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