IRLR7821PBF MOSFET Transistor

The IRLR7821PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR7821PBF transistor as follows.

IRLR7821PBF Transistor Specification

Transistor Code		IRLR7821PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		4.2nS
Gate-Threshold Voltage (Maximum)		1V

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