IRLR7811WPBF MOSFET Transistor

The IRLR7811WPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR7811WPBF transistor as follows.

IRLR7811WPBF Transistor Specification

Transistor Code		IRLR7811WPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	64A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0105Ohm
Power Dissipation (Maximum)	PD	71W
Drain-Source Capacitance		420pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		4.8nS
Gate-Threshold Voltage (Maximum)		2.5V

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