IRLR7807ZPBF MOSFET Transistor

The IRLR7807ZPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR7807ZPBF transistor as follows.

IRLR7807ZPBF Transistor Specification

Transistor Code		IRLR7807ZPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	43A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0138Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		2.25V

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