IRLR3636PBF MOSFET Transistor

The IRLR3636PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR3636PBF transistor as follows.

IRLR3636PBF Transistor Specification

Transistor Code		IRLR3636PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0068Ohm
Power Dissipation (Maximum)	PD	143W
Drain-Source Capacitance		332pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		216nS
Gate-Threshold Voltage (Maximum)		2.5V

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