IRLR3636 MOSFET Transistor

The IRLR3636 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR3636 transistor as follows.

IRLR3636 Transistor Specification

Transistor Code		IRLR3636
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	99A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0068Ohm
Power Dissipation (Maximum)	PD	143W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		33nC

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