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IRLR3114Z MOSFET Transistor

The IRLR3114Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR3114Z transistor as follows.

Circuit diagram symbol of the IRLR3114Z transistor

IRLR3114Z Transistor Specification

Transistor Code IRLR3114Z
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 16V
Drain Current (Maximum) ID 130A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0045Ohm
Power Dissipation (Maximum) PD 140W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 40nC

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