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IRLR120PBF MOSFET Transistor

The IRLR120PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR120PBF transistor as follows.

Circuit diagram symbol of the IRLR120PBF transistor

IRLR120PBF Transistor Specification

Transistor Code IRLR120PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 7.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.27Ohm
Power Dissipation (Maximum) PD 42W
Drain-Source Capacitance 150pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 64nS
Gate-Threshold Voltage (Maximum) 2V

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