IRLR120N MOSFET Transistor

The IRLR120N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR120N transistor as follows.

IRLR120N Transistor Specification

Transistor Code		IRLR120N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.185Ohm
Power Dissipation (Maximum)	PD	39W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		13.3nC

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