IRLR014N MOSFET Transistor

The IRLR014N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR014N transistor as follows.

IRLR014N Transistor Specification

Transistor Code		IRLR014N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	28W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		47nS
Gate-Threshold Voltage (Maximum)		1V

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