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IRLMS6802PBF MOSFET Transistor

The IRLMS6802PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLMS6802PBF transistor as follows.

Circuit diagram symbol of the IRLMS6802PBF transistor

IRLMS6802PBF Transistor Specification

Transistor Code IRLMS6802PBF
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT26
Transistor SMD Code E*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 220pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 33nS
Gate-Threshold Voltage (Maximum) 1.2V

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