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IRLMS5703 MOSFET Transistor

The IRLMS5703 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLMS5703 transistor as follows.

Circuit diagram symbol of the IRLMS5703 transistor

IRLMS5703 Transistor Specification

Transistor Code IRLMS5703
Transistor Type MOSFET
Control Channel Type P-Channel
Package MICRO6
Transistor SMD Code 2D_D*
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 1.7W
Drain-Source Capacitance 89pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 7.2nC

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