IRLML6402GPBF MOSFET Transistor

The IRLML6402GPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLML6402GPBF transistor as follows.

IRLML6402GPBF Transistor Specification

Transistor Code		IRLML6402GPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23_SOT346
Transistor SMD Code		E*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		145pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		48nS
Gate-Threshold Voltage (Maximum)		1.2V

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