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IRLML6401PBF MOSFET Transistor

The IRLML6401PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLML6401PBF transistor as follows.

Circuit diagram symbol of the IRLML6401PBF transistor

IRLML6401PBF Transistor Specification

Transistor Code IRLML6401PBF
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Transistor SMD Code F*
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 4.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 1.3W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 0.95V

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