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IRLML6401GPBF MOSFET Transistor

The IRLML6401GPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLML6401GPBF transistor as follows.

Circuit diagram symbol of the IRLML6401GPBF transistor

IRLML6401GPBF Transistor Specification

Transistor Code IRLML6401GPBF
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23_SOT346
Transistor SMD Code F*
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 4.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 1.3W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 0.95V

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