IRLML6302GPBF MOSFET Transistor

The IRLML6302GPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLML6302GPBF transistor as follows.

IRLML6302GPBF Transistor Specification

Transistor Code		IRLML6302GPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23_SOT346
Transistor SMD Code		C*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.78A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	0.54W
Drain-Source Capacitance		53pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		1.5V

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