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IRLM220A MOSFET Transistor

The IRLM220A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLM220A transistor as follows.

Circuit diagram symbol of the IRLM220A transistor

IRLM220A Transistor Specification

Transistor Code IRLM220A
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT223
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.8Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 55pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 24nS
Gate-Threshold Voltage (Maximum) 2V

IRLM220A MOSFET Transistor Overview

The IRLM220A is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT223 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the IRLM220A MOSFET

Followings are the key electrical characteristics of the IRLM220A MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IRLM220A MOSFET transistor is 200V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the IRLM220A MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IRLM220A MOSFET transistor is 1.13A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IRLM220A MOSFET transistor when the transistor is fully turned on is 0.8 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IRLM220A MOSFET transistor can comfortably transfer into heat without breaking is 2W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the IRLM220A MOSFET transistor is 55pF. This value influences to the switching speed of the IRLM220A MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IRLM220A MOSFET transistor is switched on is 24nS. This is the rate at which IRLM220A MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the IRLM220A MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of IRLM220A MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the IRLM220A MOSFET transistor. You can download the official IRLM220A MOSFET transistor datasheet to get more infromation about this transistor.

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