IRLI640A MOSFET Transistor

The IRLI640A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLI640A transistor as follows.

IRLI640A Transistor Specification

Transistor Code		IRLI640A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		1310pF
Operating Junction Temperature (Maximum)		150°C

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