IRLI620GPBF MOSFET Transistor

The IRLI620GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLI620GPBF transistor as follows.

IRLI620GPBF Transistor Specification

Transistor Code		IRLI620GPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		91pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		31nS
Gate-Threshold Voltage (Maximum)		2V

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