IRLHS6376 MOSFET Transistor

The IRLHS6376 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLHS6376 transistor as follows.

IRLHS6376 Transistor Specification

Transistor Code		IRLHS6376
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN2X2
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.082Ohm
Power Dissipation (Maximum)	PD	1.5W

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