IRLHM630PBF MOSFET Transistor

The IRLHM630PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLHM630PBF transistor as follows.

IRLHM630PBF Transistor Specification

Transistor Code		IRLHM630PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3.3X3.3
Transistor SMD Code		630
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0032Ohm
Power Dissipation (Maximum)	PD	2.7W
Drain-Source Capacitance		330pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		1.1V

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