IRLHM620PBF MOSFET Transistor

The IRLHM620PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLHM620PBF transistor as follows.

IRLHM620PBF Transistor Specification

Transistor Code		IRLHM620PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3.3X3.3
Transistor SMD Code		620
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0025Ohm
Power Dissipation (Maximum)	PD	2.7W
Drain-Source Capacitance		900pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1.1V

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