IRLF120 MOSFET Transistor

The IRLF120 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLF120 transistor as follows.

IRLF120 Transistor Specification

Transistor Code		IRLF120
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO39
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	5.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		73nS
Gate-Threshold Voltage (Maximum)		2V

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