The IRLD120PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the IRLD120PBF transistor as follows.
| Transistor Code | IRLD120PBF | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | DIP4 | |
| Drain-Source Voltage (Maximum) | VDS | 100V |
| Gate-Source Voltage (Maximum) | VGS | 10V |
| Drain Current (Maximum) | ID | 1.3A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.27Ohm |
| Power Dissipation (Maximum) | PD | 1.3W |
| Drain-Source Capacitance | 150pF | |
| Operating Junction Temperature (Maximum) | 175°C | |
| Rise Time | 64nS | |
| Gate-Threshold Voltage (Maximum) | 2V | |
UXPython is not the creator or an official representative of the IRLD120PBF MOSFET transistor. You can download the official IRLD120PBF MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
IRLD014PBF MOSFET Transistor
IRLD110PBF MOSFET Transistor
IRLD024PBF MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.