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IRLD014PBF MOSFET Transistor

The IRLD014PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLD014PBF transistor as follows.

Circuit diagram symbol of the IRLD014PBF transistor

IRLD014PBF Transistor Specification

Transistor Code IRLD014PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package DIP4
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 1.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 1.3W
Drain-Source Capacitance 170pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 110nS
Gate-Threshold Voltage (Maximum) 2V

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