IRLB8314PBF MOSFET Transistor

The IRLB8314PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLB8314PBF transistor as follows.

IRLB8314PBF Transistor Specification

Transistor Code		IRLB8314PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	130A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0024Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		890pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		142nS
Gate-Threshold Voltage (Maximum)		2.2V

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