IRLB3813PBF MOSFET Transistor

The IRLB3813PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLB3813PBF transistor as follows.

IRLB3813PBF Transistor Specification

Transistor Code		IRLB3813PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	260A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00195Ohm
Power Dissipation (Maximum)	PD	230W
Drain-Source Capacitance		1620pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		170nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		86nC

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