IRLB3036G MOSFET Transistor

The IRLB3036G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLB3036G transistor as follows.

IRLB3036G Transistor Specification

Transistor Code		IRLB3036G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	270A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0024Ohm
Power Dissipation (Maximum)	PD	380W
Total Gate Charge		91nC

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