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IRLB3036G MOSFET Transistor

The IRLB3036G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLB3036G transistor as follows.

Circuit diagram symbol of the IRLB3036G transistor

IRLB3036G Transistor Specification

Transistor Code IRLB3036G
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 16V
Drain Current (Maximum) ID 270A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0024Ohm
Power Dissipation (Maximum) PD 380W
Total Gate Charge 91nC

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