IRL8113S MOSFET Transistor

The IRL8113S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRL8113S transistor as follows.

IRL8113S Transistor Specification

Transistor Code		IRL8113S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	105A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	110W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.25V
Total Gate Charge		23nC

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