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IRL630SPBF MOSFET Transistor

The IRL630SPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRL630SPBF transistor as follows.

Circuit diagram symbol of the IRL630SPBF transistor

IRL630SPBF Transistor Specification

Transistor Code IRL630SPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.4Ohm
Power Dissipation (Maximum) PD 74W
Drain-Source Capacitance 220pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 57nS
Gate-Threshold Voltage (Maximum) 2V

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