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IRL620S MOSFET Transistor

The IRL620S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRL620S transistor as follows.

Circuit diagram symbol of the IRL620S transistor

IRL620S Transistor Specification

Transistor Code IRL620S
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 5.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.8Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 16nC

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